msa-0436 cascadable silicon bipolar mmic amplifiers data sheet features cascadable 50 ? gain block 3 db bandwidth: dc to 3.8 ghz 12.5 dbm typical p 1 db at 1.0 ghz 8.5 db typical gain at 1.0 ghz unconditionally stable (k>1) cost effective ceramic microstrip package description the msa-0436 is a high performance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a cost effective, microstrip package. this mmic is designed for use as a general purpose 50 ? gain block. typical applications include narrow and broad band if and rf amplifiers in industrial and military applications. the msa-series is fabricated using avagos 10 ghz f t , 25 ghz f max , silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold met- allization to achieve excellent performance, unifor- mity and reliability. the use of an external bias resistor for temperature and current stability also allows bias flexibility. typical biasing configuration c block c block r bias v cc > 7 v v d = 5.25 v rfc (optional) in out msa 4 1 2 3 36 micro-x package
2 msa-0436 absolute maximum ratings parameter absolute maximum [1] device current 100 ma power dissipation [2,3] 650 mw rf input power +13 dbm junction temperature 150 c storage temperature [4] C65 to 150 c thermal resistance [2,5] : jc = 140 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 7.1 mw/ c for t c > 109 c. 4. storage above +150 c may tarnish the leads of this package making it difficult to solder into a circuit. 5. the small spot size of this technique results in a higher, though more accurate determination of q jc than do alternate methods. g p power gain (|s 21 | 2 ) f = 0.1 ghz db 7.5 8.5 9.5 ? g p gain flatness f = 0.1 to 2.5 ghz db 0.6 1.0 f 3 db 3 db bandwidth ghz 3.8 input vswr f = 0.1 to 2.5 ghz 1.4:1 output vswr f = 0.1 to 2.5 ghz 1.9:1 nf 50 ? noise figure f = 1.0 ghz db 6.5 p 1 db output power at 1 db gain compression f = 1.0 ghz dbm 12.5 ip 3 third order intercept point f = 1.0 ghz dbm 25.5 t d group delay f = 1.0 ghz psec 125 v d device voltage v 4.75 5.25 5.75 dv/dt device voltage temperature coefficient mv/ c C8.0 note: 1. the recommended operating current range for this device is 30 to 70 ma. typical performance as a function of current is on the following page. electrical specifications [1] , t a = 25 c symbol parameters and test conditions: i d = 50 ma, z o = 50 ? units min. typ. max. vswr ordering information part numbers no. of devices comments msa-0436-blkg 100 bulk MSA-0436-TR1G 1000 7" reel
3 msa-0436 typical scattering parameters (z o = 50 ? , t a = 25 c, i d = 50 ma) freq. ghz mag ang db mag ang db mag ang mag ang 0.1 .08 175 8.5 2.67 175 C16.4 .151 1 .20 C10 0.2 .08 172 8.5 2.68 170 C16.3 .153 2 .20 C16 0.4 .07 171 8.5 2.67 161 C16.4 .151 3 .20 C33 0.6 .07 166 8.5 2.66 151 C16.2 .155 6 .21 C45 0.8 .05 169 8.4 2.64 142 C16.1 .156 8 .22 C57 1.0 .05 175 8.3 2.61 136 C16.0 .159 10 .24 C68 1.5 .04 C142 8.1 2.55 109 C15.0 .178 13 .26 C96 2.0 .09 C145 7.8 2.46 87 C14.2 .196 15 .28 C123 2.5 .14 C154 7.3 2.33 71 C13.1 .221 18 .31 C140 3.0 .22 C175 6.6 2.14 50 C12.5 .238 14 .33 C160 3.5 .28 170 5.8 1.94 32 C11.7 .260 9 .35 C173 4.0 .34 156 4.8 1.74 15 C11.3 .271 4 .34 C179 4.5 .37 140 3.9 1.57 C1 C10.7 .291 C2 .33 C171 5.0 .42 120 3.0 1.41 C16 C10.4 .302 C8 .32 C160 s 11 s 21 s 12 s 22 typical performance, t a = 25 c (unless otherwise noted) 0.1 0.3 0.5 1.0 3.0 6.0 0 2 4 6 8 10 12 g p (db) figure 1. typical power gain vs. frequency, t a = 25 c, i d = 50 ma. gain flat to dc v d (v) figure 2. device current vs. voltage. 0 20 40 60 80 i d (ma) 234567 1 t c = +125 c t c = +25 c t c = ?5 c i d (ma) figure 3. power gain vs. current. 4 5 6 7 8 9 g p (db) 20 40 50 60 70 30 5 6 7 5 6 7 8 9 11 10 12 13 8 p 1 db (dbm) g p (db) temperature, ( c) figure 4. output power at 1 db gain compression, nf and power gain vs. case temperature, f = 1.0 ghz, i d =50ma. p 1 db ?5 ?5 +25 +85 +125 g p nf 0.1 0.2 0.3 0.5 2.0 1.0 4.0 frequency (ghz) figure 5. output power at 1 db gain compression vs. frequency. 3 6 9 12 15 18 21 p 1 db (dbm) i d = 70 ma i d = 30 ma i d = 50 ma 4.0 6.0 5.5 6.5 7.0 7.5 nf (db) frequency (ghz) figure 6. noise figure vs. frequency. 0.1 0.2 0.3 0.5 2.0 1.0 nf (db) frequency (ghz) i d = 30 ma i d = 50 ma i d = 70 ma 0.1 ghz 1.0 ghz 2.0 ghz
1 3 4 2 source source drain gate 2.15 (0.085) 2.11 (0.083) dia. 0.508 (0.020) 2.54 (0.100) 4.57 0.25 0.180 0.010 0.15 0.05 (0.006 0.002) notes: 1. dimensions are in millimeters (inches) 2. tolerances: in .xxx = 0.005 mm .xx = 0.13 0.56 (0.022) 1.45 0.25 (0.057 0.010) 36 micro-x package dimensions for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies, limited in the united states and other countrie s. data subject to change. copyright ? 2007 avago technologies, limited. all rights reserved. obsoletes 5989-2740en av02-0303en - april 12, 2007
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